Magnetoresistive random access memory (MRAM) is a method of storing data bits using magnetic states instead of the electrical charges used by devices such as dynamic random access memory (DRAM). By combining the high speed of static random access memory (SRAM) and the high density of DRAM, MRAM promises to significantly improve electronic products by storing greater amounts of data, enabling faster data access and consuming less energy than existing electronic memory. The global mram market is anticipated to increase by USD 1,350 million till 2028 at an average annual growth of 28.1 percent as per the latest report by Gen Consulting Company.
This industry report offers market estimates of the global market, followed by a detailed analysis of the product, application, and region. The global market data on mram can be segmented by product: toggle MRAM, STT-MRAM. Globally, the STT-MRAM segment made up the largest share of the mram market. Mram market is further segmented by application: aerospace & defense, automotive, consumer electronics, enterprise storage, robotics, others. Based on region, the mram market is segmented into: North America, Asia Pacific, Europe, Rest of the World (ROW).
The global mram market is highly competitive. The competitive landscape of the industry has also been examined along with the profiles of the key players Avalanche Technology Inc., Everspin Technologies Inc., Honeywell International Inc., Numem Inc., NVE Corporation, Samsung Electronics Co. Ltd., Spin Memory Inc., Taiwan Semiconductor Manufacturing Company Limited (TSMC), Toshiba Corporation.
The data-centric report focuses on market trends, status and outlook for segments. With comprehensive market assessment across the major geographies, the report is a valuable asset for the existing players, new entrants and the future investors.
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– Get a detailed picture of the Global MRAM Market
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| REPORT ATTRIBUTE | DETAILS |
|---|---|
| Base Year | 2021 |
| Forecast Year | 2022-2028 |
| CAGR (2022-2028) | 28.1% |
| Pages | 21 |
| Key Players | Avalanche Technology Inc., Everspin Technologies Inc., Honeywell International Inc., Numem Inc., NVE Corporation, Samsung Electronics Co. Ltd., Spin Memory Inc., Taiwan Semiconductor Manufacturing Company Limited (TSMC), Toshiba Corporation |
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