Magnetoresistive random access memory (MRAM) is a method of storing data bits using magnetic states instead of the electrical charges used by devices such as dynamic random access memory (DRAM). By combining the high speed of static random access memory (SRAM) and the high density of DRAM, MRAM promises to significantly improve electronic products by storing greater amounts of data, enabling faster data access and consuming less energy than existing electronic memory. The global MRAM market is anticipated to increase by USD 1,350.2 million till 2028 at an average annual growth of 28.1 percent as per the latest report by Gen Consulting Company.

The report covers market size and growth, segmentation, regional breakdowns, competitive landscape, trends and strategies for global MRAM market. It traces the market’s historic and forecast market growth. The report identifies top segments for opportunities and strategies based on market trends and leading competitors’ approaches. This study also provides an analysis of the impact of the COVID-19 crisis on the MRAM industry.

This industry report offers market estimates and forecasts of the global market, followed by a detailed analysis of the type, offering, end user, and region. The global market for MRAM can be segmented by type: toggle MRAM, spin-transfer torque MRAM. The spin-transfer torque MRAM segment held the largest revenue share in 2021. MRAM market is further segmented by offering: stand-alone, embedded. Among these, the stand-alone segment was accounted for the highest revenue generator in 2021. Based on end user, the MRAM market is segmented into: consumer electronic, robotic, enterprise storage, transportation, aerospace and military, others. The enterprise storage segment captured the largest share of the market in 2021. On the basis of region, the MRAM market also can be divided into: North America, Europe, Asia-Pacific, MEA (Middle East and Africa), Latin America. According to the research, Asia-Pacific had the largest share in the global MRAM market.

Market Segmentation
By type: toggle MRAM, spin-transfer torque MRAM
By offering: stand-alone, embedded
By end user: consumer electronic, robotic, enterprise storage, transportation, aerospace and military, others
By region: North America, Europe, Asia-Pacific, MEA (Middle East and Africa), Latin America

The market research report covers the analysis of key stake holders of the global MRAM market. Some of the leading players profiled in the report include Avalanche Technology, Inc., Everspin Technologies Inc., Hangzhou HFC Semiconductor Corporation, Honeywell International Inc., Infineon Technologies AG, Intel Corporation, Numem Inc., NVE Corporation, Qualcomm Incorporated, Samsung Electronics Co., Ltd., Spin Memory, Inc., Taiwan Semiconductor Manufacturing Company Limited (TSMC), Toshiba Corporation, Tower Semiconductor Ltd., among others.
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Historical & Forecast Period
This research report provides analysis for each segment from 2018 to 2028 considering 2021 to be the base year.

Scope of the Report
– To analyze and forecast the market size of the global MRAM market.
– To classify and forecast the global MRAM market based on type, offering, end user, region.
– To identify drivers and challenges for the global MRAM market.
– To examine competitive developments such as mergers & acquisitions, agreements, collaborations and partnerships, etc., in the global MRAM market.
– To identify and analyze the profile of leading players operating in the global MRAM market.

Why Choose This Report
– Gain a reliable outlook of the global MRAM market forecasts from 2022 to 2028 across scenarios.
– Identify growth segments for investment.
– Stay ahead of competitors through company profiles and market data.
– The market estimate for ease of analysis across scenarios in Excel format.
– Strategy consulting and research support for three months.
– Print authentication provided for the single-user license.