Global Electric Double-layer Capacitor (EDLC) Market 2023
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For years, the industry has been working on a variety of emerging memory technologies, including 3D XPoint, FRAM, Nano RAM, MRAM, phase-change memory and ReRAM to keep up with the explosion of data and bandwidth requirements in systems. Gen Consulting Company predicts global next generation memory market will grow from USD 1,176 million in 2020 to USD 4,069 million by 2027, achieving a CAGR of 19.4 percent, according to the latest edition of the Global Next Generation Memory Market Report.
The report provides in-depth analysis and insights regarding the current global market scenario, latest trends and drivers into global next generation memory market. It offers an exclusive insight into various details such as market size, key trends, competitive landscape, growth rate and market segments. This study also provides an analysis of the impact of the COVID-19 crisis on the next generation memory industry.
The next generation memory market is segmented on the basis of type, technology, application, and region. The next generation memory market is segmented as below:
By type:
– non-volatile
– volatile
By technology:
– magneto-resistive random-access memory (MRAM)
– ferroelectric random-access memory (FRAM)
– resistive random-access memory (ReRAM)
– 3D Xpoint
– nano RAM
– hybrid memory cube (HMC)
– high-bandwidth memory (HBM)
– others (PCM, SRAM, and STT-RAM)
By application:
– automotive
– consumer electronics
– enterprise storage
– industrial
– military & defense
– telecommunications
– others
By region:
– region
– Asia Pacific
– Europe
– North America
– Rest of the World (RoW)
The market research report covers the analysis of key stake holders of the global next generation memory market. Some of the leading players profiled in the report include Advanced Micro Devices, Inc., Avalanche Technologies Inc., Cypress Semiconductor Corporation (Infineon Technologies AG), Fujitsu Limited, Honeywell International Inc., Intel Corporation, Kioxia Holdings Corporation, Micron Technologies Inc., Samsung Electronics Co., Ltd., SK Hynix Inc., Western Digital Corporation, among others.
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Historical & Forecast Period
This research report provides analysis for each segment from 2017 to 2027 considering 2020 to be the base year.
Scope of the Report
– To analyze and forecast the market size of the global next generation memory market.
– To classify and forecast the global next generation memory market based on type, technology, application, and region.
– To identify drivers and challenges for the global next generation memory market.
– To examine competitive developments such as mergers & acquisitions, agreements, collaborations and partnerships, etc., in the global next generation memory market.
– To identify and analyze the profile of leading players operating in the global next generation memory market.
Why Choose This Report
– Gain a reliable outlook of the global next generation memory market forecasts from 2021 to 2027 across scenarios.
– Identify growth segments for investment.
– Stay ahead of competitors through company profiles and market data.
– The market estimate for ease of analysis across scenarios in Excel format.
– Strategy consulting and research support for three months.
– Print authentication provided for the single-user license.
Part 1. Introduction
1.1 Market definition
1.2 Key benefits
1.3 Market segment
Part 2. Methodology
2.1 Primary
2.2 Secondary
Part 3. Executive summary
Part 4. Market overview
4.1 Introduction
4.2 Market dynamics
4.2.1 Drivers
4.2.2 Restraints
Part 5. Global market for next generation memory by type
5.1 Non-volatile
5.1.1 Market size and forecast
5.2 Volatile
5.2.1 Market size and forecast
Part 6. Global market for next generation memory by technology
6.1 Magneto-resistive random-access memory (MRAM)
6.1.1 Market size and forecast
6.2 Ferroelectric random-access memory (FRAM)
6.2.1 Market size and forecast
6.3 Resistive random-access memory (ReRAM)
6.3.1 Market size and forecast
6.4 3D Xpoint
6.4.1 Market size and forecast
6.5 Nano RAM
6.5.1 Market size and forecast
6.6 Hybrid memory cube (HMC)
6.6.1 Market size and forecast
6.7 High-bandwidth memory (HBM)
6.7.1 Market size and forecast
6.8 Others (PCM, SRAM, and STT-RAM)
6.8.1 Market size and forecast
Part 7. Global market for next generation memory by application
7.1 Automotive
7.1.1 Market size and forecast
7.2 Consumer electronics
7.2.1 Market size and forecast
7.3 Enterprise storage
7.3.1 Market size and forecast
7.4 Industrial
7.4.1 Market size and forecast
7.5 Military & defense
7.5.1 Market size and forecast
7.6 Telecommunications
7.6.1 Market size and forecast
7.7 Others
7.7.1 Market size and forecast
Part 8. Global market for next generation memory by region
8.1 Asia Pacific
8.1.1 Market size and forecast
8.2 Europe
8.2.1 Market size and forecast
8.3 North America
8.3.1 Market size and forecast
8.4 Rest of the World (RoW)
8.4.1 Market size and forecast
Part 9. Key competitor profiles
9.1 Advanced Micro Devices, Inc.
9.2 Avalanche Technologies Inc.
9.3 Cypress Semiconductor Corporation (Infineon Technologies AG)
9.4 Fujitsu Limited
9.5 Honeywell International Inc.
9.6 Intel Corporation
9.7 Kioxia Holdings Corporation
9.8 Micron Technologies Inc.
9.9 Samsung Electronics Co., Ltd.
9.10 SK Hynix Inc.
9.11 Western Digital Corporation
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DISCLAIMER
ABOUT GEN CONSULTING COMPANY
Advanced Micro Devices, Inc.
Avalanche Technologies Inc.
Cypress Semiconductor Corporation (Infineon Technologies AG)
Fujitsu Limited
Honeywell International Inc.
Intel Corporation
Kioxia Holdings Corporation
Micron Technologies Inc.
Samsung Electronics Co., Ltd.
SK Hynix Inc.
Western Digital Corporation
REPORT ATTRIBUTE | DETAILS |
---|---|
Base Year | 2020 |
Forecast Year | 2021-2027 |
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